High purity indium
1. Purity: 4N (99.99%); 5N (99.999%); 6 n (99.9999%)
2. Physical properties: atomic weight: 114.818
Electronegativity: 1.78
Density: 7.31 g/cm3 (20 ℃) (0-100 ℃)
Melting point: 156.5985 ℃
Boiling point: 2072 ℃
3. Technical connection: indium anode-electrolysis-vacuum smelting (removing lead, arsenic, cadmium, phosphorus, mercury, sulfur, selenium and so on with low melting point) -pull-purification -- preparation of indium powder by spray method -- cooling -- dust collection;
4. Test: icp-ms (4N: the sum of all impurity elements is less than 100ppm), SEM (scanning electron microscope);
5. Particle size: -100 mesh; - 200 mesh; - 325 mesh;
6. Oxygen content detection: <15ppm; ,
7. Advantages: no agglomeration, good dispersion, low oxygen content;
8. Application: electronic paste,ITO, In2O3, indium antimonide, indium phosphide, indium nitride, etc.;
9. Packaging: bottled with argon protection in the bottle and aluminum composite film vacuum packaging;
10. Service: provide free samples, MSDS and practical protective measures, and provide solutions for material application.
11. Specifications:
Chemical purity:
High purity indium: in-05 purity 99.999% above, silver, aluminum, arsenic, cadmium, copper, iron, magnesium, nickel, lead, sulfur, silicon, tin, thallium, zinc impurity total content is less than 10ppm;
Ultra pure indium: In-06 purity 99.9999% above, cadmium, copper, iron, magnesium, lead, sulfur, silicon, tin impurity total content less than 1ppm;
Ultra high purity indium: in-07 purity 99.99999% above, silver, cadmium, copper, iron, magnesium, nickel, lead, zinc impurity total content less than 0.1 PPM;
